Motorola M11L98 NPN RF Power Transistor Bench Tested
Full Description & History
Motorola M11L98 NPN silicon RF power transistor in a flange-mount RF power package. This device has been bench tested by RF Boneyard and identified as a functional NPN silicon bipolar junction transistor with measurable gain, normal junction behavior, low saturation voltage, and no measurable collector leakage during the recorded test.
The device is marked M11L98 with additional markings 185 and RR0012. Public reference material identifies M11L98 as a Motorola part number, but a complete verified original datasheet and exact RF operating specifications were not located during verification. Because of that, buyers should confirm circuit requirements and original equipment documentation before installation.
LIFECYCLE: DISCONTINUED
HISTORICAL BACKGROUND: Motorola produced a wide range of flange-mounted bipolar RF power transistors for communications, commercial radio, industrial RF, and transmitter applications. The M11L98 marking is associated with Motorola, but verified original factory specifications for this exact device were not located. RF Boneyard therefore lists the device using its confirmed marking and bench-test results without assigning unsupported power, voltage, or frequency ratings.
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Compatible Radios / Boards
Equipment originally designed for the Motorola M11L98 or circuits verified electrically and mechanically compatible with this device. Verify transistor pinout, bias requirements, operating voltage, current, RF frequency range, output power, package mounting, and heatsinking requirements before installation.
RF Boneyard Bench Notes
RF Boneyard Bench Notes
NPN Silicon BJT
Red-B Green-E Blue-C
hFE=19 at Ic=5.01mA
Vbe=0.640V at Ib=1.00mA
Vbe=0.662V at Ib=2.00mA
VceSat=0.056V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
Rshunt=28000R
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