Toshiba 2SC2290 PAIR NPN RF Power Transistor Japan Bench Tested
Full Description & History
Original Toshiba 2SC2290 PAIR NPN silicon RF power transistor manufactured in Japan. These vintage devices are intended for RF power amplifier and transmitter output-stage service and are increasingly difficult to source as original Toshiba parts.
These examples are donor-pull devices and have been individually checked on the RF Boneyard bench. Both identify correctly as NPN silicon BJTs, show measurable transistor gain, normal junction behavior, and 0.000 mA collector leakage during the recorded semiconductor test.
LIFECYCLE: DISCONTINUED
HISTORICAL BACKGROUND: Toshiba manufactured the 2SC2290 during the era when Japanese bipolar RF power transistors were widely used in communications transmitters and RF amplifier equipment. Original Toshiba-marked Japanese devices are now encountered primarily as older service stock, surplus inventory, or donor pulls and remain useful for restoration of equipment designed around this transistor family.
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Compatible Radios / Boards
RF power amplifier, transmitter, communications radio, and related equipment originally designed for the Toshiba 2SC2290. Verify the original equipment service manual, transistor pinout, bias requirements, mounting configuration, operating voltage, RF power requirements, and circuit compatibility before installation.
RF Boneyard Bench Notes
RF Boneyard Bench Notes
DEVICE 1
NPN Silicon BJT
Red-B Green-E Blue-C
hFE=27 at Ic=4.99mA
Vbe=0.605V at Ib=1.00mA
Vbe=0.690V at Ib=5.00mA
VceSat=0.124V at Ic=5.0mA and Ib=0.99mA
IcLeak=0.000mA
Protection diode detected
DEVICE 2
NPN Silicon BJT
Red-B Green-E Blue-C
hFE=29 at Ic=4.99mA
Vbe=0.599V at Ib=1.00mA
Vbe=0.653V at Ib=5.00mA
VceSat=0.047V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
Protection diode detected
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