STMicroelectronics SD2931-10 RF Power MOSFET Pair – Tested Close-Reading Pair

RF Boneyard Bench Notes

D2931-10 RF Power MOSFET Pair #3 — Bench Metrics

SKU: RFB-SD2931-10-DP-PAIR-003
Tester Identification: MOSFET
Device Type: RF Power MOSFET

Metric Device A Device B

Vgs(on) / Threshold 2.354 V 2.376 V
Ip / Drain Current 5.02 mA 5.03 mA
Gate Leakage / Ig 0 µA 1 µA
Vgs(off) 1.501 V 1.567 V
Ip at Vgs(off) 5.0 µA 4.9 µA
gm / Transconductance 31.0 mA/V 32.8 mA/V
Ip range during gm test 3.0–5.0 mA 3.0–5.0 mA
Rds(on) 1.0 ? 1.0 ?
Ip during Rds(on) test 5.0 mA 5.0 mA
Vgs during Rds(on) test 8.0 V 8.0 V
Body Diode Vf 0.59 V 0.59 V
Pair assessment

This is a clean bench-tested SD2931-10 pair. The two devices match very well on drain current, Rds(on), body diode, and test current range. Device B is slightly higher on Vgs(off) and gm, but still close enough to present as a bench-matched donor-pull pair based on low-current component tester readings.

Product listing bench note

Bench-Tested Pair Notes:
Both SD2931-10 devices identified as MOSFETs on component tester. Low-current bench readings recorded for Vgs(on), drain current, gate leakage, Vgs(off), transconductance, Rds(on), and body diode Vf. Pair shows close matching across key low-current test points and is sold as surplus stock. Final RF validation should be performed by the buyer under proper bias, heatsink, load, and service-manual conditions before installation.