Toshiba 2SC2879 RF Power Transistor Pair (2) SET – 100W PEP HF / CB / 10-Meter Linear Amplifier Final

RF Boneyard Bench Notes

Bench / DCA Analyzer Test Notes

Part:
Original Toshiba 2SC2879 RF Power Transistor Pair

Source / Donor:
Removed as a pair from a Kenwood TS-850S donor final section.

Test Method:
DCA component analyzer basic transistor test.

Device 1 / Chip 1:
- Detected Type: NPN bipolar transistor
- hFE / Gain: 74
- Ic / Collector Test Current: 5.00 mA
- Ib / Base Current: 1.00 mA
- Vbe / Base-Emitter Voltage: 0.689 V
- Vce / Collector-Emitter Voltage: 0.022 V
- Ic Leakage: 0.000 mA
- Shorts: None detected
- DCA Result: Passed

Device 2 / Chip 2:
- Detected Type: NPN bipolar transistor
- hFE / Gain: 80
- Ic / Collector Test Current: 5.00 mA
- Ib / Base Current: 1.00 mA
- Vbe / Base-Emitter Voltage: 0.621 V
- Vce / Collector-Emitter Voltage: 0.023 V
- C-E / Ic Leakage: 0.0000 mA
- Shorts: None detected
- DCA Result: Passed

Pair Summary:
Both Toshiba 2SC2879 devices identified correctly as NPN bipolar transistors and passed DCA component testing. Both showed zero leakage and no shorts detected. hFE readings measured 74 and 80 under the analyzer test conditions. Vce readings were very close at 0.022 V and 0.023 V. These devices were removed from the same Kenwood TS-850S final section and are being sold together as a tested donor-pull pair.

Technician Note:
DCA readings are provided for buyer reference as basic component-analyzer test results. Buyer should perform final verification, fitment checks, installation checks, bias adjustment, and service-manual alignment before use in any RF amplifier or transceiver final-stage circuit.