Motorola 2N7800 NPN Silicon Power Transistor TO-220 Bench Tested High Gain Device
Full Description & History
Original Motorola 2N7800 NPN silicon transistor housed in a TO-220 package. This vintage Motorola semiconductor has been individually bench tested by RF Boneyard™ and verified for gain, junction integrity, saturation voltage, and collector leakage performance.
This particular device exhibited exceptionally strong gain during bench evaluation, making it an excellent candidate for amplifier driver stages, regulator circuits, industrial electronics, power supply repairs, engineering projects, and vintage equipment restoration where compatibility has been confirmed.
Features the classic Motorola "M" logo and date code 8626. A quality vintage semiconductor suitable for repair inventory, collections, and restoration work.
Origin Tracker
Obsolete Stock
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Compatible Radios / Boards
Audio Amplifiers
Driver Stages
Power Supplies
Linear Regulators
Industrial Electronics
Switching Circuits
Control Systems
Electronic Restoration Projects
Buyer must verify compatibility before installation.
RF Boneyard Bench Notes
RF Boneyard Bench Notes
| Metric | Result |
| -------------------------- | ------------------------ |
| Device Type | NPN Silicon BJT |
| Pinout | Red-B, Green-E, Blue-C |
| hFE | 244 @ Ic = 4.99mA |
| Vbe @ Ib = 1.00mA | 0.559V |
| Vbe @ Ib = 5.00mA | 0.633V |
| VceSat | 0.022V |
| VceSat Test Conditions | Ic = 5.00mA, Ib = 1.00mA |
| Collector Leakage (IcLeak) | 0.000mA |
Gain Test: PASS
High Gain Device:
hFE = 244
Junction Test: PASS
Leakage Test: PASS
Saturation Test: PASS
Shorted Junctions:
NONE DETECTED
Open Junctions:
NONE DETECTED
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