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NTE284 NPN Silicon Power Transistor TO-3 Metal Can USA Semiconductor

Transistors & Semiconductors • SKU RFB-VTR-NTE284-001

$19.99

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The NTE284 is a rugged NPN silicon power transistor housed in the classic TO-3 metal package and designed for demanding industrial, laboratory, communications, and power supply applications. Commonly used as a replacement for the 2N3442 family of transistors, the NTE284 is well suited for high-voltage linear regulator circuits, series pass regulators, industrial control equipment, audio amplifiers, and vintage test equipment repairs.

Its all-metal TO-3 construction provides excellent thermal performance and long-term reliability, making it a popular choice among technicians restoring older electronic equipment. The NTE284 remains a sought-after replacement device for maintaining legacy systems where original semiconductors may no longer be readily available.

This vintage semiconductor is ideal for electronics repair professionals, restorers, experimenters, and collectors seeking genuine TO-3 power devices for restoration, maintenance, or replacement applications.

Part numberNTE284
ManufacturerNTE Electronics
ConditionSee description
Quantity1
Obsolete Stock Origin Tracker Obsolete Stock

Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.

Boneyard Pipeline
In Stock1 available
StatusGone When Gone

Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.

Compatible Radios / Boards

Linear Power Supplies
Audio Amplifiers
Industrial Controls
Series Pass Regulators
Laboratory Equipment
Communications Equipment
Bench Test Equipment
High Voltage Driver Circuits

RF Boneyard Bench Notes

Measured Parameters

hFE: 54
IC: 5.00 mA
VBE @ IB = 1.00 mA: 0.541 V
VBE @ IB = 5.00 mA: 0.595 V
VCE(sat): 0.021 V
Saturation Test Current (IC): 5.00 mA
Saturation Base Current (IB): 1.00 mA
ICE Leakage: 0.000 mA

Bench Assessment

Bench verified NTE284 NPN silicon power transistor in TO-3 metal can package. Measured hFE 54 at IC 5.00 mA, VBE 0.541 V at IB 1.00 mA, VBE 0.595 V at IB 5.00 mA, VCE(sat) 0.021 V at IC 5.00 mA / IB 1.00 mA, and ICE leakage 0.000 mA. Device shows strong gain, normal silicon junction behavior, clean saturation response, and no measurable leakage during testing.

Bench Status: Bench Verified

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See Listing Tech Install Uncommon / Legacy Part
RF Boneyard Passport
#
Part Number:
NTE284
🏭
Manufacturer:
NTE Electronics
Category:
RF Boneyard Part
🔧
Condition:
Donar Vinatge Pull
Bench Status:
Bench Tested Pass
📄
Docs:
See Listing
Install Level:
Technician Install
Rarity:
Uncommon / Legacy Part
Passport Key
Condition = source/physical state. Bench Status = what kind of bench check or note exists. Docs = datasheet or support file attached. Install Level = caution level for fitting the part. Rarity = how hard it may be to replace.
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