2N4900 NPN TO-3 Power Transistor Pair – Hong Kong Stylized F Logo
$24.99
Vintage 2N4900 NPN power transistor pair in TO-3 metal can package. Both devices are marked HONGKONG with a stylized F logo and matching 2N4900 part markings. RF Boneyard bench tested and verified PASS.
These are suitable for vintage electronics restoration, power supply repair, audio amplifier repair, communications equipment, test equipment, industrial control equipment, and legacy electronic assemblies using TO-3 NPN power transistors.
Manufacturer logo is present but not positively identified, so this listing is sold as Unknown Hong Kong Manufacturer / Stylized F Logo with marking verified and bench data provided.
Origin Tracker
NOS / New Old Stock
Unused new old stock from legacy inventory. Packaging, age, and cosmetic condition may vary.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Vintage audio equipment, HF radios, CB radios, communications gear, bench power supplies, electronic test equipment, industrial control boards, restoration projects, and obsolete semiconductor replacement work.
RF Boneyard Bench Notes
RF Boneyard Bench Tested Metrics
Device #1:
Device Type: BJT Power Transistor
Part Number: 2N4900
Package: TO-3 Metal Can
Polarity: NPN
Technology: Silicon
Top Marking: F 709 / 2N4900 / HONGKONG
Logo / Marking: Stylized F Logo
HFE: 68
IC: 5.00mA
IB: 1.00mA
VBE: 0.593V @ IB 1.00mA
VBE: 0.652V @ IB 5.00mA
VCESAT: 0.028V
IC LEAK: 0.0000mA
Bench Result: PASS
Device #2:
Device Type: BJT Power Transistor
Part Number: 2N4900
Package: TO-3 Metal Can
Polarity: NPN
Technology: Silicon
Top Marking: F 709 / 2N4900 / HONGKONG
Logo / Marking: Stylized F Logo
HFE: 233
IC: 5.00mA
IB: 1.00mA
VBE: 0.600V @ IB 1.00mA
VCESAT: 0.015V
IC LEAK: 0.000mA
Bench Result: PASS
Pair / Lot Note:
Both devices are RF Boneyard bench tested and passed. These are sold as a 2-piece lot, not a gain-matched pair, due to HFE difference between devices.
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