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Motorola 2N3740 Vintage PNP Silicon Power Transistors TO-66 4 PCS Lot

Transistors & Semiconductors • SKU RFB01051

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Full Description & History

Original vintage Motorola 2N3740 PNP silicon bipolar power transistors supplied as one complete lot of 4 PCS.

These vintage devices feature rugged TO-66 metal cases with mounting flanges and were designed for amplifier driver stages, switching circuits, and general electronic power applications.

The lot contains four vintage transistors with original metal-case construction. Two devices have clearly visible Motorola logos and 2N3740 markings, including additional codes 7326 and 912.

The remaining devices exhibit substantial surface oxidation and aging of their metal cases, with markings not fully legible in the photographs.

All four devices were identified as PNP silicon bipolar junction transistors during electronic component analyzer testing. Individual gain measurements vary considerably, making this an assorted tested lot rather than a matched transistor set.

The listing is for the complete lot of four transistors, not individual devices.

Original Motorola 2N3740 Specifications:

Transistor Type: PNP Silicon BJT
Collector-Emitter Voltage: 60V
Collector-Base Voltage: 60V
Emitter-Base Voltage: 7V
Continuous Collector Current: 4A
Peak Collector Current: 10A
Maximum Power Dissipation: 25W at 25 degrees C case temperature
Package: TO-66
Case Style: Metal flange mount
Collector Connection: Metal case
Typical Applications: Power amplifier drivers, medium-power amplification, and switching circuits

These vintage power transistors are of interest for restoring older electronic equipment where the original Motorola 2N3740 was specified.

They may also be useful for compatible amplifier driver circuits, industrial electronics, power supplies, and period-correct component replacement.

The devices show vintage cosmetic wear, surface oxidation, and discoloration consistent with age and previous handling.

LIFECYCLE: OBSOLETE

HISTORICAL BACKGROUND:
Motorola traces its origins to the Galvin Manufacturing Corporation, established in Chicago in 1928 by brothers Paul and Joseph Galvin.

The company initially manufactured battery eliminators before expanding into radio receivers and other electronic equipment. In 1930, it introduced automobile radios marketed under the Motorola name.

Motorola became an important name in communications technology, radio manufacturing, and electronic component development. The company adopted the Motorola corporate name in 1947.

During the 1950s, Motorola expanded its semiconductor manufacturing activities as transistor technology began replacing vacuum tubes in many electronic applications.

The commercial development of silicon bipolar transistors represented an important advancement in electronic engineering. Compared with earlier germanium semiconductor devices, silicon transistors generally provided improved thermal characteristics and greater suitability for many demanding electronic applications.

During the 1960s and 1970s, Motorola became a major American supplier of discrete semiconductor components, including small-signal transistors, power transistors, rectifiers, voltage regulators, and specialized electronic devices.

The Motorola 2N3740 belongs to a generation of medium-power silicon bipolar transistors developed for electronic circuits requiring greater current-handling capability than ordinary small-signal devices.

Its PNP polarity and metal-case construction made it suitable for amplifier drivers, switching circuits, and other medium-power applications.

The TO-66 metal package was an established semiconductor package used in transistorized electronic equipment before modern plastic power transistor packages became dominant.

The package featured a metal housing, two electrical leads, and a mounting flange that allowed the device to be attached to a heatsink or chassis for thermal management.

The metal case served as the collector connection, making electrical insulation and mounting arrangements important considerations during installation.

The 2N3740 was specified for a maximum collector-emitter voltage of 60V, continuous collector current of 4A, and maximum power dissipation of 25W under specified operating conditions.

Historical Motorola semiconductor information identified the 2N3740 and related 2N3741 as silicon PNP power transistors intended for driver, switching, and amplifier applications.

The 2N3740 was also identified as a complementary device to the NPN 2N3766. Complementary transistor arrangements were important in the development of transistorized power amplification and control circuitry.

Complementary PNP and NPN devices were frequently used in push-pull amplifier designs, driver stages, and other circuits requiring devices of opposite polarity.

The electrical characteristics of complementary transistors were selected according to the requirements of the circuit, and complementary devices were not necessarily interchangeable.

As semiconductor manufacturing technology advanced, many original metal-case transistor designs were replaced in newly manufactured equipment by smaller and more economical plastic semiconductor packages.

Despite these developments, original vintage Motorola power transistors remain of interest to electronics technicians, collectors, and restoration specialists maintaining older amplifiers, power supplies, test equipment, and industrial electronic assemblies.

Motorola's semiconductor activities were later affected by corporate restructuring. ON Semiconductor was established in 1999 from Motorola's Semiconductor Components Group, while Freescale Semiconductor was separated from Motorola in 2004.

These changes became part of the broader evolution of American semiconductor manufacturing and the movement of older transistor families into obsolete or legacy replacement markets.

Original Motorola-marked components preserve historical manufacturer identification and physical construction associated with earlier generations of semiconductor technology.

This lot contains four surviving vintage 2N3740-type PNP silicon transistors with individually documented component analyzer measurements.

Part number2N3740
ManufacturerMotorola
ConditionPULL
Quantity1
Obsolete Stock Origin Tracker Obsolete Stock

Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.

⚡ Boneyard Pipeline
In Stock1 available
StatusGone When Gone

Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.

Compatible Radios / Boards

Compatible Radios / Boards

Electronic circuits originally designed for the Motorola 2N3740 PNP silicon power transistor.

Original electrical ratings:

Collector-Emitter Voltage: 60V
Collector-Base Voltage: 60V
Emitter-Base Voltage: 7V
Continuous Collector Current: 4A
Peak Collector Current: 10A
Maximum Power Dissipation: 25W under specified case-temperature conditions
Package: TO-66

Potential applications include vintage amplifier driver stages, medium-power switching circuits, industrial electronics, power supplies, and compatible electronic restoration projects.

The Motorola 2N3740 is historically identified as complementary to the NPN 2N3766, but the two devices are not direct substitutes.

The four devices have different measured current gain values and are not represented as matched transistors.

Buyers must verify circuit requirements, device polarity, lead configuration, collector-case connection, electrical ratings, gain requirements, mounting arrangements, and heatsinking before installation.

RF Boneyard Bench Notes

RF Boneyard Bench Notes

All four devices identified by electronic component analyzer as PNP Silicon BJT.

Analyzer Lead Identification:
Red: Base
Green: Collector
Blue: Emitter

TRANSISTOR 1:
hFE: 135 at Ic=5.00mA
Vbe: 0.593V at Ib=1.00mA
Vbe: 0.661V at Ib=5.00mA
VceSat: 0.060V at Ic=5.0mA and Ib=1.00mA
IcLeak: 0.000mA

TRANSISTOR 2:
hFE: 242 at Ic=3.79mA
Vbe: 0.574V at Ib=1.00mA
Vbe: 0.644V at Ib=5.00mA
VceSat: 0.061V at Ic=5.0mA and Ib=1.00mA
IcLeak: 0.000mA

TRANSISTOR 3:
hFE: 58 at Ic=5.00mA
Vbe: 0.621V at Ib=1.00mA
Vbe: 0.675V at Ib=5.00mA
IcLeak: 0.000mA

TRANSISTOR 4:
hFE: 64 at Ic=5.00mA
Vbe: 0.566V at Ib=1.00mA
Vbe: 0.631V at Ib=5.00mA
VceSat: 0.081V at Ic=5.0mA and Ib=1.00mA
IcLeak: 0.000mA

Measured hFE Range: 58 to 242

All four devices were identified as PNP silicon transistors.

Reported leakage current: 0.000mA for each transistor at the analyzer's test conditions.

These low-current analyzer measurements do not establish transistor performance at maximum rated current, voltage, power dissipation, or operating temperature.

No high-current load testing, full-load switching, breakdown-voltage testing, or extended thermal testing performed.

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Also Filed Under
Vintage Electronic Components & Radio Parts
See Listing Tech Install Obsolete Vintage
RF Boneyard Passport
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#
Part Number:
2N3740
🏭
Manufacturer:
Motorola
▦
Category:
RF Boneyard Part
🔧
Condition:
vintage stock
⌁
Bench Status:
PULL
📄
Docs:
See Listing
⚠
Install Level:
Technician Install
◆
Rarity:
Obsolete Vintage
Passport Key
Condition = source/physical state. Bench Status = what kind of bench check or note exists. Docs = datasheet or support file attached. Install Level = caution level for fitting the part. Rarity = how hard it may be to replace.
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