SGS 6251-1 NPN Silicon Power Transistors TO-3 Made in Italy Bench Tested 2-Piece Lot
Full Description & History
Original SGS 6251-1 NPN silicon bipolar power transistors manufactured in Italy and housed in rugged TO-3 metal can packages. Both vintage components feature original SGS markings and have been individually bench tested using a semiconductor component analyzer.
Both transistors demonstrated NPN silicon junction behavior, with measured DC current gain of 15 under their respective test conditions. Offered together as a 2-piece lot for vintage equipment restoration and replacement applications.
Technical Specifications:
Origin Tracker
Obsolete Stock
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Compatible Radios / Boards
Suitable for restoration of vintage electronic equipment originally fitted with SGS 6251-1 NPN silicon transistors in TO-3 metal packages.
Potential applications include legacy power amplifier circuits, regulated power supplies, industrial control equipment, transistor switching stages, and older electronic instrumentation.
Both devices were identified as NPN silicon BJTs and produced measured hFE readings of 15. However, their gains were measured at different collector currents, so these results do not establish that the transistors are electrically matched.
No verified direct replacement or manufacturer cross-reference has been established for the SGS 6251-1. The marking should not be assumed equivalent to a 2N6251.
Before substitution, verify collector-emitter voltage rating, collector current capability, power dissipation, pinout, gain characteristics, and safe operating area against the original equipment requirements.
RF Boneyard Bench Notes
RF Boneyard Bench Notes
Both transistors individually bench tested using a semiconductor component analyzer.
TRANSISTOR 1
Device Identification: NPN Silicon BJT
Test Lead Mapping: Red Emitter, Green Collector, Blue Base
DC Current Gain hFE: 15 at Ic 13.05mA
Base-Emitter Voltage Vbe: 0.530V at Ib 1.00mA
Base-Emitter Voltage Vbe: 0.590V at Ib 5.00mA
Collector-Emitter Saturation Voltage VceSat: 0.111V at Ic 5.0mA and Ib 1.00mA
Collector Leakage IcLeak: 0.000mA
TRANSISTOR 2
Device Identification: NPN Silicon BJT
Test Lead Mapping: Red Emitter, Green Collector, Blue Base
DC Current Gain hFE: 15 at Ic 5.00mA
Base-Emitter Voltage Vbe: 0.524V at Ib 1.00mA
Base-Emitter Voltage Vbe: 0.572V at Ib 5.00mA
Collector Leakage IcLeak: 0.000mA
BENCH EVALUATION:
Both devices were successfully identified as NPN silicon bipolar transistors and demonstrated transistor action during low-current testing.
Both displayed zero collector leakage at the analyzer's measurement resolution.
Collector-emitter saturation voltage was recorded for Transistor 1 only. No saturation voltage reading was supplied for Transistor 2.
Neither transistor has been tested under high-current operating conditions. Maximum voltage capability, sustained power dissipation, thermal performance, and operation under load remain unverified.
Sold together as two individually bench-tested vintage SGS transistors. Electrical matching for amplifier service has not been established.
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