Motorola 68391 NPN Silicon Power Transistors TO-3 Metal Can Bench Tested 2-Piece Lot
Full Description & History
Original Motorola 68391 NPN silicon bipolar junction power transistors in vintage TO-3 metal can packages. Both components carry the additional marking 001-001 and have been individually tested using a semiconductor component analyzer.
The TO-3 metal package provides a rugged mounting arrangement and effective heat transfer when properly installed on a suitable heatsink. These devices are offered for restoration, replacement research, and servicing of legacy electronic equipment.
Technical Specifications:
Transistor Type: NPN Silicon BJT
Package: TO-3 Metal Can
Mounting: Through-Hole, Two-Hole Flange
Origin Tracker
Obsolete Stock
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Compatible Radios / Boards
Suitable for restoration and repair of equipment originally using Motorola transistors with matching 68391 and 001-001 markings, subject to verification of electrical specifications and circuit requirements.
Potential applications include vintage audio amplifier output stages, regulated power supplies, industrial switching circuits, motor control assemblies, laboratory instrumentation, and legacy electronic control equipment.
Both devices were identified as NPN silicon bipolar transistors during bench testing. The measured DC gains of 27 and 11 indicate substantially different gain characteristics under comparable test conditions.
These components should not be assumed suitable for matched push-pull amplifier stages or parallel operation without additional evaluation.
No verified direct replacement or cross-reference number has been established. Buyers should confirm voltage ratings, collector current capability, power dissipation, pin configuration, gain requirements, and thermal characteristics before installation.
RF Boneyard Bench Notes
RF Boneyard Bench Notes
Both transistors individually tested using a semiconductor component analyzer.
TRANSISTOR 1
Device Identification: NPN Silicon BJT
Test Lead Mapping: Red Base, Green Collector, Blue Emitter
DC Current Gain hFE: 27 at Ic 5.01 mA
Base-Emitter Voltage Vbe: 0.530V at Ib 1.00 mA
Base-Emitter Voltage Vbe: 0.588V at Ib 5.00 mA
Collector-Emitter Saturation Voltage VceSat: 0.152V at Ic 5.0 mA and Ib 1.00 mA
Collector Leakage IcLeak: 0.000 mA
TRANSISTOR 2
Device Identification: NPN Silicon BJT
Test Lead Mapping: Red Base, Green Collector, Blue Emitter
DC Current Gain hFE: 11 at Ic 5.00 mA
Base-Emitter Voltage Vbe: 0.528V at Ib 1.00 mA
Base-Emitter Voltage Vbe: 0.591V at Ib 5.00 mA
Collector-Emitter Saturation Voltage VceSat: 0.106V at Ic 5.0 mA and Ib 1.00 mA
Collector Leakage IcLeak: 0.000 mA
BENCH EVALUATION:
Both devices were recognized as NPN silicon transistors and demonstrated transistor action during low-current analyzer testing.
No measurable collector leakage was reported at the instrument's displayed resolution.
Significant gain variation was observed between the devices. They have not been matched for amplifier operation.
High-current performance, breakdown voltage, maximum power dissipation, and operation under load have not been tested.
Sold together as two individually bench-tested vintage transistors with the measured characteristics disclosed above.
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