Vintage Motorola MRF148 30W 50V RF Power MOSFET Tested Pull Made in Malaysia

Original vintage Motorola MRF148 N-channel enhancement-mode linear RF power MOSFET, manufactured in Malaysia and featuring the distinctive ceramic flange-mount package with gold-colored metallization.

This genuine Motorola-marked device is a vintage donor pull, individually inspected and electrically bench-tested using the Peak Atlas DCA75 semiconductor analyzer.

Designed for linear RF power amplifier applications in industrial, commercial, and amateur radio equipment. The MRF148 is rated for 30W RF output power and operation through 175 MHz, with typical 18 dB gain at 30 MHz using a 50V operating supply.

Original device markings:

Motorola identification logo

MRF148

9016

MALAYSIA

Visible evidence of previous installation, including solder residue and lead wear. Original manufacturer identification remains clearly legible.

MANUFACTURER TECHNICAL SPECIFICATIONS:

Device Type: N-Channel Enhancement-Mode Linear RF Power MOSFET

RF Output Power: 30W PEP

Frequency Capability: Up to 175 MHz

Nominal RF Test Supply Voltage: 50V DC

Drain-Source Voltage Maximum: 120V

Drain-Gate Voltage Maximum: 120V

Gate-Source Voltage Maximum: ±40V

Continuous Drain Current Maximum: 6.0A

Total Device Dissipation: 115W at 25°C case temperature

Power Derating: 0.66W/°C above 25°C

Maximum Junction Temperature: 200°C

Storage Temperature Range: -65°C to +150°C

Thermal Resistance, Junction-to-Case: 1.52°C/W maximum

Drain-Source Breakdown Voltage: 125V minimum under specified datasheet test conditions

Zero-Gate Drain Current: 1.0mA maximum at Vds=50V

Gate Leakage Current: 100nA maximum at Vgs=20V

Gate Threshold Voltage: 1.0V minimum, 3.0V typical, 5.0V maximum

Drain-Source On-Voltage: 3.0V typical, 5.0V maximum at Id=2.5A and Vgs=10V

Forward Transconductance: 0.8S minimum, 1.2S typical at specified manufacturer test conditions

Input Capacitance: 50pF typical

Output Capacitance: 35pF typical

Reverse Transfer Capacitance: 8.0pF typical

Typical RF Power Gain at 30 MHz: 18 dB

Typical RF Power Gain at 175 MHz: 15 dB

Typical Drain Efficiency at 30W PEP: 40%

Typical Drain Efficiency at 30W CW: 50%

Typical Third-Order Intermodulation Distortion: -35 dB at 30W PEP

Typical Eleventh-Order Intermodulation Distortion: -60 dB at 30W PEP

Manufacturer Load-Mismatch Qualification: 30:1 VSWR at all phase angles under specified test conditions

All manufacturer specifications describe the MRF148 device type under specified laboratory conditions and do not represent individually verified full-power performance of this used transistor.

HISTORICAL BACKGROUND: Motorola was one of the pioneering American semiconductor manufacturers and a major supplier of discrete RF power transistors used in communications, broadcasting, industrial electronics, and amateur radio equipment. The MRF148 belongs to Motorola's historical generation of silicon linear RF power MOSFETs designed for high-frequency power amplification.

Motorola's 1995 RF Device Data documentation describes the MRF148 as a 30W linear RF power field-effect transistor suitable for amplifier applications through 175 MHz. Its design emphasizes linear operation, intermodulation performance, and resistance to demanding load-mismatch conditions.

This particular transistor carries the original Motorola logo, MRF148 identification, and MALAYSIA country-of-origin marking. Its 9016 marking is consistent with a 1990 week-16 production date code, although that interpretation has not been independently confirmed.

The original MRF148 is distinct from the later MRF148A designation. Vintage Motorola-marked examples are of particular interest to technicians maintaining legacy RF equipment and collectors preserving historical semiconductor technology.

LIFECYCLE: OBSOLETE