SD2931-11 RF Power MOSFET Pair -150W 50V HF/VHF/UHF N-Channel Transistor Tested Set #1
$280.00
This is a STMicroelectronics SD2931-11 RF power MOSFET, removed as a used donor pull from a working RF unit and bench-checked with a semiconductor analyzer.
The SD2931-11 pair x2 is a serious 50V RF MOSFET used in HF, VHF, UHF, ISM, and RF power amplifier service. It is designed for large-signal RF applications up to 230 MHz and is rated for 150W minimum RF output with 14 dB gain at 175 MHz. This makes it useful repair stock for technicians working on RF power stages, amplifier modules, ham radio equipment, and hard-to-source PA sections.
This part tested as an N-channel enhancement MOSFET with normal-looking gate behavior, body diode behavior, and low-current analyzer readings. It has not been full RF-output tested after removal.
RF Boneyard Bench Notes
Detected Component: N-Channel Enhancement MOSFET
Part Number: SD2931-11
Unit ID: SD2931-11-2
Condition: Used donor pull / working-unit pull
Bench Status: DCA tested / passed component identification
Electrical Readings
Vgs(th): 2.335 V
Ip / Id test current: 5.0 mA / 5.04 mA captured
Ip / Id observed range: 3.1 mA to 5.0 mA
Ig / Gate leakage: 1 µA
gm / Transconductance: 33.8 mA/V
Rds(on): 1.0 ohms
Vgs used for Rds(on): 8.0 V
Body diode Vf: 0.59 V
Vgs(off): 1.633 V
Off-current reading: Ip = 4.9 µA
transistor 2
SD2931-11 Current Unit — Bench Test Complete
Detected: MOSFET
Vgs(th): 2.268 V
Ip / Id test current: 5.09-5.1 mA
Ip / Id observed range: 3.0-5.1 mA
Ig / Gate leakage: 1 µA
Vgs(off): 1.155 V
Off-current / Ip: 5.0 µA
gm / Transconductance: 33.3 mA/V
Rds(on): 1.0 ?
Vgs for Rds(on): 8.0 V
Body diode Vf: 0.58 V
This one matches the other transistor very nicely on the big numbers:
Pair comparison
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