ST SD2918 Data-sheet
Download the attached PDF/image reference for pinout, specs, service notes, or bench reference.
Open Datasheet / PDFSD2918 RF MOSFET Final DRIVER
$89.00
SD 2918
Compatible Radios / Boards
SD2918 Power Mosfet Driver - Compatible with Yeasu radio FTDX9000, FTDX5000
Vintage Semiconductor History – STMicroelectronics SD2918 RF Power MOSFET
The SD2918 RF power MOSFET was developed by STMicroelectronics, one of the world's leading semiconductor manufacturers. STMicroelectronics was formed in 1987 through the merger of Italy's SGS Microelettronica and France's Thomson Semiconducteurs, combining decades of European semiconductor expertise into a single global company.
The SD2918 became a widely respected high-power RF transistor used in commercial communications equipment, broadcast transmitters, industrial RF systems, amateur radio amplifiers, and other demanding RF power applications. Its rugged construction, reliability, and RF performance helped establish it as a popular choice among equipment manufacturers and amplifier designers.
Today the SD2918 is considered an obsolete semiconductor and is no longer in regular production. Original devices remain sought after by repair technicians, amplifier builders, radio restorers, and collectors maintaining legacy RF equipment. The device family is particularly well known within the amateur radio community, where it appeared in numerous high-performance RF amplifier designs and transceiver power amplifier stages.
Many amateur radio operators recognize the SD2918 as the RF power device used in several premium transceivers and amplifier designs from the late 1990s and 2000s, further contributing to its reputation among enthusiasts and service technicians.
RF Boneyard™ Note: The SD2918 represents an important chapter in the evolution of modern RF power MOSFET technology and remains a recognized part among technicians servicing classic amateur radio, commercial communications, and broadcast equipment.
RF Boneyard Bench Notes
Detected Device Type:
N-channel RF MOSFET
Vgs(th) / Gate Threshold:
1.780 V
Vgs / Test Gate Drive:
8.0 V
Id / Test Current:
5.00 mA
Id / Test Range:
3.0 mA to 5.0 mA
Ig / Gate Leakage:
0 µA
gm / Transconductance:
28.3 mA/V
Rds(on):
1.0 ohms
Body Diode:
0.61 Vf
Shorts:
None detected / pending final confirmation
Analyzer Result:
Analyzer Behavior:
Behaved as MOSFET
Detected Device Type:
N-channel RF MOSFET
Displayed Terminals:
Gate / Source / Drain
Fault Indication:
No fault or short warning displayed by analyzer
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