International Rectifier IRFP240 N-Channel Power MOSFET 200V 20A TO-247 Bench Tested
$12.95
Original International Rectifier IRFP240 N-channel enhancement-mode power MOSFET in the large TO-247 power package. Designed for high-voltage and high-current power applications including audio amplifiers, linear and switching power supplies, inverter systems, motor controls, industrial electronics, battery equipment, and general power switching circuits. This exact device is marked IRFP240 Y55K AB and has been individually bench tested by RF Boneyard.
HISTORICAL BACKGROUND:
International Rectifier was one of the pioneering semiconductor manufacturers that helped bring power MOSFET technology into widespread commercial and industrial use. Its HEXFET family became especially important as engineers moved away from traditional bipolar power transistors toward voltage-controlled MOSFET devices capable of fast switching and substantial power handling. The IRFP240 became particularly well known in high-power audio amplifier designs, where its high-voltage capability, substantial current capacity, and large TO-247 package made it suitable for demanding output stages mounted to substantial heatsinks. It also became common in power supplies, inverter systems, motor controls, battery equipment, and industrial power electronics. Original International Rectifier-marked IRFP240 devices remain desirable for repairing and restoring older amplifiers and industrial equipment originally designed around this classic MOSFET family.
Unused new old stock from legacy inventory. Packaging, age, and cosmetic condition may vary.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Suitable for equipment originally specifying the IRFP240 and for compatible N-channel enhancement-mode power MOSFET applications. Common uses include high-power audio amplifiers, amplifier output stages, linear power supplies, switching power supplies, inverter circuits, motor-control systems, battery equipment, industrial electronics, and general high-current power switching. Verify drain-source voltage rating, current requirements, gate-drive characteristics, pinout, heatsinking, mounting insulation, safe operating area, and circuit compatibility before substitution.
RF Boneyard Bench Notes
N-Ch Enhancement Mode MOSFET
Red-S / Green-G / Blue-D
Vgs(on)=3.342V at Id=5.07mA and Ig=1uA
Vgs(off)=2.587V at Id=5.2uA
gm=30.3mA/V at Id=3.0mA to 5.1mA
Rds(on)<1.0 ohm at Id=5.1mA and Vgs=8.0V
Body diode Vf=0.59V
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