International Rectifier IRFP240 N-Channel Power MOSFET 200V 20A TO-247 Bench Tested
$12.95
Original International Rectifier IRFP240 N-channel enhancement-mode power MOSFET in the large TO-247 power package, individually bench tested by RF Boneyard. The IRFP240 is a classic high-voltage power MOSFET rated for approximately 200V drain-to-source operation and 20A continuous drain current under specified case-temperature conditions, with the family specified around 0.18 ohm maximum Rds(on) at its full datasheet test conditions. ([Vishay][1]) The IRFP240 became a familiar power semiconductor during the expansion of high-current MOSFET switching technology and has been used in power supplies, DC switching systems, motor controls, inverter circuits, battery equipment, industrial electronics, and high-power audio amplifier designs. Its TO-247 package provides a substantial mounting surface for heatsinking and made this style of device particularly useful in equipment that needed considerably more thermal capability than smaller transistor packages. The IRFP240 has also become well known among audio amplifier builders because complementary and quasi-complementary MOSFET output-stage designs frequently used high-voltage power devices of this family. The original IRFP240 designation remains especially useful for servicing older equipment where technicians want to match the semiconductor originally installed rather than redesign around a newer device. Current Vishay documentation continues the IRFP240 family in TO-247AC form, while the older non-PbF IRFP240 listing is considered obsolete by some major distributors, making older manufacturer-marked devices useful for restoration and service stock. ([DigiKey][2]) This exact device is marked IRFP240 with additional Y55K / AB production markings and has been individually checked by RF Boneyard for MOSFET operation, gate threshold behavior, transconductance, low-current drain-source conduction, and body-diode operation. This is a power MOSFET and should not be assumed to be an RF final transistor solely because of its high power capability.
Origin Tracker
NOS / New Old Stock
Unused new old stock from legacy inventory. Packaging, age, and cosmetic condition may vary.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Suitable for equipment originally specifying the IRFP240 or for technician-designed replacement applications where an N-channel enhancement-mode MOSFET with compatible voltage, current, gate-drive, power-dissipation, package, pinout, and switching characteristics is required. Historically useful in power amplifiers, linear and switching power supplies, motor-control circuits, inverter systems, industrial electronics, battery systems, and general high-power switching applications. Buyer or technician must confirm circuit requirements, pinout, gate-drive voltage, heatsinking, insulation, safe operating area, and electrical compatibility before substitution.
RF Boneyard Bench Notes
Individually tested by RF Boneyard. Tester identified device as N-Ch Enhancement Mode MOSFET. Test connections: Red-G / Green-S / Blue-D. Vgs(on) = 3.338V at Id = 5.02mA and Ig = 1uA. Vgs(off) = 2.589V at Id = 5.1uA. gm = 30.0mA/V at Id = 3.0mA to 5.0mA. Rds(on) <1.0 ohm at Id = 5.0mA and Vgs = 8.0V. Body diode forward voltage = 0.59V. Device passed RF Boneyard low-current MOSFET identification and semiconductor health testing. These measurements are component-tester readings and are not a full-power 20A load test or high-voltage breakdown test.
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