STMicroelectronics SD2931-10 RF Power MOSFET Pair New Mouser Stock Bench Tested
$240.00
Genuine STMicroelectronics SD2931-10 N-channel RF power MOSFET pair sourced new from Mouser Electronics and sold as one pair of two devices. Both transistors carry matching visible markings: SD2931-10 / C2678 VY / MAR CZ 926.
The SD2931 family was developed for demanding high-power RF service and became a respected device platform for communications transmitters, RF power amplifiers, amateur radio equipment, industrial RF systems, and professional RF service applications. Its rugged metal-flange construction provides the mechanical and thermal characteristics required for high-power final-stage operation when properly mounted, biased, and cooled.
Original distributor-sourced RF power devices are increasingly important for technicians repairing equipment designed around parts such as the SD2931-10. Counterfeit, remarked, damaged, or previously stressed RF transistors can create significant problems in high-power amplifier repair. These devices were sourced new through Mouser Electronics and have been individually electrically screened by RF Boneyard before being offered for sale.
This listing is for TWO STMicroelectronics SD2931-10 RF power MOSFETs sold together as one bench-tested pair. The exact physical devices shown in the photographs are the devices included with this listing. RF Boneyard identified them as Transistor 3 and Transistor 4 during bench testing so the individual measurements could remain associated with the exact devices.
Both devices display closely grouped electrical characteristics. Their measured Vgs(on) values are only 0.032 V apart, both produced an Rds(on) result below 1.0 ohm under the stated test conditions, and both measured an identical 0.58 V forward body-diode voltage. Transconductance measured 30.6 mA/V on Transistor 3 and 33.1 mA/V on Transistor 4 under the stated low-current tester conditions.
This pair is intended for experienced RF technicians performing amplifier final-stage repair, transmitter restoration, engineering work, or maintaining premium RF bench stock. Installation of RF power MOSFETs requires proper circuit diagnosis, bias adjustment, heatsinking, mounting technique, thermal compound, load conditions, and verification of surrounding components.
Bench testing provides documented electrical screening of the devices under the stated test conditions. It does not guarantee RF output power in an unknown circuit or equipment containing additional faults.
Unused new old stock from legacy inventory. Packaging, age, and cosmetic condition may vary.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
Intended for RF amplifiers, transmitter final stages, communications equipment, amateur radio equipment, industrial RF systems, and restoration applications designed for the STMicroelectronics SD2931-10 or an electrically appropriate application of the SD2931 family. Always verify the original equipment service documentation, device specifications, circuit topology, bias requirements, mounting arrangement, heatsinking, and electrical compatibility before installation. Similar transistor numbers should not be assumed to be direct substitutes without technical verification.
RF Boneyard Bench Notes
Both SD2931-10 devices were individually bench tested by RF Boneyard and retained together as this exact two-device pair.
TRANSISTOR 3:
Device Type: N-Channel Enhancement Mode MOSFET
Test Lead Reference: Red = Gate / Green = Source / Blue = Drain
Vgs(on): 2.335 V at Id = 5.08 mA and Ig = 1 µA
Vgs(off): 1.474 V at Id = 5.0 µA
Transconductance gm: 30.6 mA/V at Id = 3.0 mA to 5.1 mA
Rds(on): Less than 1.0 ohm at Id = 5.1 mA and Vgs = 8.0 V
Body Diode Vf: 0.58 V
TRANSISTOR 4:
Device Type: N-Channel Enhancement Mode MOSFET
Test Lead Reference: Red = Gate / Green = Source / Blue = Drain
Vgs(on): 2.367 V at Id = 5.08 mA and Ig = 2 µA
Vgs(off): 1.556 V at Id = 5.1 µA
Transconductance gm: 33.1 mA/V at Id = 3.0 mA to 5.1 mA
Rds(on): Less than 1.0 ohm at Id = 5.1 mA and Vgs = 8.0 V
Body Diode Vf: 0.58 V
PAIR COMPARISON:
Vgs(on) Difference: 0.032 V
Rds(on): Both less than 1.0 ohm under identical stated test conditions
Body Diode Vf: Identical at 0.58 V
Transconductance gm: 30.6 mA/V and 33.1 mA/V
Both devices demonstrated normal N-channel enhancement-mode MOSFET behavior during RF Boneyard bench screening.
Ask the bench before you buy.
Post a question about this part
Login or create an account to ask a product question. This helps keep spam out of the RF Boneyard bench.
Login to AskAnswered Questions
No answered questions yet. Be the first to ask the bench.
