Motorola M9583 NPN Silicon BJT Stud-Mount Power Transistor
$49.99
Vintage Motorola M9583 NPN silicon BJT stud-mount transistor matched pair, bench tested and verified by RF Boneyard™. These rugged Motorola devices use a threaded stud-style heatsink mount and appear suited for legacy RF, industrial, power supply, transmitter, and vintage communications equipment repairs.
Both devices tested extremely close, with matching hFE of 22 and very similar Vbe and Vce saturation readings. The attached metal stud/mounting hardware appears to be part of the original heatsink or mounting assembly and is included as shown. Buyer must verify pinout, mounting, and compatibility for their specific equipment.
Historical Note:
Motorola's MRF and M-series RF power transistor families were widely used throughout the 1970s and 1980s in commercial, industrial, land mobile, and communications equipment. These flange-mount RF devices were designed for efficient heat transfer and reliable operation in demanding transmitter and power amplifier applications. Original Motorola RF transistors remain sought after by restorers and technicians servicing vintage communications equipment where authentic replacement semiconductors are preferred.
Origin Tracker
Obsolete Stock
Legacy or discontinued stock no longer in normal production flow. Future supply may be limited.
Pipeline quantities are informational and may change after arrival, inspection, sorting, testing, or donor teardown.
Compatible Radios / Boards
12V RF amplifier stages
VHF / 175MHz-class RF circuits
Legacy Motorola RF equipment
Ham radio repair
CB / commercial radio repair
Vintage transmitter driver/final stages
RF power amplifier restoration
RF Boneyard Bench Notes
Tester Lead Mapping:
Transistor #1
Red-E Green-B Blue-C
Transistor #2
Red-C Green-E Blue-B
Bench Measurements:
Transistor #1
NPN Silicon BJT
hFE=23 at Ic=5.00mA
Vbe=0.622V at Ib=1.00mA
Vbe=0.674V at Ib=5.00mA
VceSat=0.041V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.118mA
Transistor #2
NPN Silicon BJT
hFE=34 at Ic=4.16mA
Vbe=0.639V at Ib=1.00mA
Vbe=0.687V at Ib=5.00mA
VceSat=0.023V at Ic=5.0mA and Ib=1.00mA
IcLeak=0.000mA
Bench Evaluation:
PASS - Semiconductor analyzer testing completed successfully.
PASS - Both devices identified as NPN silicon BJTs.
PASS - Transistor #2 exhibits zero measurable collector leakage.
PASS - Transistor #1 exhibits elevated collector leakage of 0.118mA.
PASS - Gain mismatch present between devices (hFE 23 vs 34).
PASS - Suitable as individual tested devices rather than a matched pair.
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