Product Datasheet
Download the attached PDF/image reference for pinout, specs, service notes, or bench reference.
Open Datasheet / PDFSD2931-10 RF Final
$240.00
Sold as Pair x2 - Q-2931-10 Power MOSFETs for Amplifier/Final Stage Repair/ Projects. Tested matched closely for dual operation.
Compatible Radios / Boards
Trusted distributor-sourced SD2918 matched pair. Bench screened by RF Boneyard. Compatable radios Yeasue FtDX9000 Linear Amplifiers: Designed for high-power (150 W) amplification at frequencies up to 230 MHz, making it common in broadband linear power amplifiers. The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the...STMicroelectronicsSD2931-10
RF Boneyard Bench Notes
RF Boneyard Bench Tests 1= Measured Results: Vgs: 2.45 V Id: 5.05 mA Ig: 0 µA Vgs(off): 1.684 V D / leakage reading: 5.1 µA gm: 30.4 mA/V Id reading: 3.0 mA at 5.1 mA test point/range Rds(on): 1.0 ? at Ip = 5.0 mA GS test voltage: 8.0 V Vf body diode: 0.60 V Bench Notes:
This SD2918 MOSFET was electrically checked using RF Boneyard bench equipment. The device showed gate response during basic screening, with Vgs measured at 2.45 V at Id = 5.05 mA. Gate leakage measured Ig = 0 µA. Vgs(off) measured 1.684 V, with leakage reading 5.1 µA. Transconductance measured gm = 30.4 mA/V, and Rds(on) measured 1.0 ? at Ip = 5.0 mA with GS test voltage noted Vgs: 2.475 V Ip: 5.03 mA Ig: 1 µA Vgs(off): 1.731 V Leakage / low-current reading: 5.1 µA gm: 32.4 mA/V Additional Id/Ip reading: 3.0 mA to 5.0 mA test range
Rds(on): < 1.0 ? at Ip = 5.0 mA GS test voltage: 8.0 V Body diode Vf: 0.50 V Short product-page version: Bench screened by RF Boneyard. mosfet # 2 Short product-page version: Bench screened by RF Boneyard. Vgs 2.45 V @ Id 5.05 mA; Ig 0 µA; Vgs(off) 1.684 V; leakage 5.1 µA; gm 30.4 mA/V; Rds(on) 1.0 ? @ Ip 5.0 mA; GS 8.0 V; body diode Vf 0.60 V. No obvious short observed during basic electrical screening. Verify compatibility before installation.
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