International Rectifier IRFP240 N-Channel Power MOSFET 200V 20A TO-247 Bench Tested
$7.50
Original International Rectifier IRFP240 N-channel enhancement-mode power MOSFET in a TO-247 power package. This device is commonly used in high-power audio amplifiers, power supplies, inverter circuits, motor controls, industrial equipment, and other high-current switching applications. This exact transistor is marked IRFP240 Y55K AB and has been individually bench tested by RF Boneyard.
HISTORICAL BACKGROUND: International Rectifier was one of the major semiconductor companies behind the widespread adoption of power MOSFET technology and became especially well known for its HEXFET family. During the transition away from large bipolar power transistors, MOSFETs such as the IRFP240 gave designers a voltage-controlled device capable of substantial power handling with fast switching and relatively simple drive requirements. The IRFP240 became particularly familiar in high-power audio amplifier construction and repair, where its large TO-247 package and high-voltage capability made it suitable for demanding output stages. It was also widely adopted in industrial power supplies, inverters, motor-control systems, and other equipment from the era when high-power MOSFET designs were becoming standard. Original International Rectifier-marked examples remain useful today for restoring and repairing equipment originally designed around this classic device family.
Compatible Radios / Boards
Suitable for equipment originally specifying the IRFP240 and for compatible N-channel enhancement-mode power MOSFET applications. Common applications include high-power audio amplifiers, amplifier output stages, linear power supplies, switching power supplies, inverter systems, motor-control circuits, battery equipment, industrial power electronics, and general high-current switching circuits. Verify drain-source voltage rating, current requirements, gate-drive voltage, pinout, heatsinking, mounting insulation, safe operating area, and circuit requirements before substitution.
RF Boneyard Bench Notes
TEST RESULTS:
N-Ch Enhancement Mode MOSFET
Red-D / Green-G / Blue-S
Vgs(on)=3.433V at Id=5.02mA and Ig=0uA
Vgs(off)=2.668V at Id=5.0uA
gm=31.0mA/V at Id=3.1mA to 5.0mA
Rds(on)<1.0 ohm at Id=5.0mA and Vgs=8.0V
Body diode Vf=0.58V
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