Bench Stock: RF MOSFETs • Tubes • Relays • DC Blocks • Attenuators • Connectors • Radio Boards
Limited Stock

Mitsubishi RD06HHF1-01 RF Power MOSFET - 6W HF PA Transistor

RF Transistors and Finals • SKU RFB-RFMOS-RD06HHF1-01

$16.00

Mitsubishi RD06HHF1-01 RF Power MOSFET for HF PA, driver, QRP amplifier, and radio repair use. 6W RF transistor for vintage communications equipment restoration.

Part numberRD06HHF1-01
ManufacturerMitsubishi Electric
Conditionnos
Quantity2

RF Boneyard Bench Notes

RF BONEYARD BREAN TEST : Bench Test Readings:
Vgs / Gate Threshold: 2.613V
Ip / Test Current Range: 0.1mA to 11.3mA
Ig / Gate Leakage: 0µA
Vgs(off): 2.30V
Ip / Off-State Current: 4.8µA
gm / Transconductance: 99mA/V
RDS(on): 3.7? at Vgs = 8.0V
Body Diode Vf: 0.75V

Ask Product Question
Product Q&A

Ask the bench before you buy.

Post a question about this part

Login or create an account to ask a product question. This helps keep spam out of the RF Boneyard bench.

Login to Ask

Answered Questions

No answered questions yet. Be the first to ask the bench.

RF Part See Listing Tech Install Rare RF Part
RF Boneyard Passport
#
Part Number:
RD06HHF1-01
🏭
Manufacturer:
Mitsubishi Electric
Category:
RF Boneyard Part
🔧
Condition:
Repair Part
Bench Status:
See Listing Notes
📄
Docs:
See Listing
Install Level:
Technician Recommended
Rarity:
Rare RF Part
Passport Key
Condition = source/physical state. Bench Status = what kind of bench check or note exists. Docs = datasheet or support file attached. Install Level = caution level for fitting the part. Rarity = how hard it may be to replace.
RF Boneyard Catalog Record limited