SD2931-10 RF Power MOSFET Pair – Tested Close-Reading Pair

RF Boneyard Bench Notes

SD2931-10 RF Power MOSFET Pair — Bench Metrics

Tester Identification: MOSFET
Device Type: RF Power MOSFET
Package: Flange-mount RF transistor package

Metric Device A Device B

Vgs(on) / Threshold 2.345 V 2.348 V
Ip / Drain Current 5.04 mA 5.00 mA
Gate Leakage / Ig 1 µA 2 µA
Vgs(off) 1.503 V 1.518 V
Ip at Vgs(off) 4.9 µA 5.1 µA
gm / Transconductance Transisistor 29.3 mA/V 30.9 mA/V
Ip range during gm test 3.0–5.0 mA 3.0–5.0 mA
Rds(on) 1.0 ? 1.0 ?
Ip during Rds(on) test 5.0 mA 5.0 mA
Vgs during Rds(on) test 8.0 V 8.0 V
Body Diode Vf 0.59 V 0.58
Bench Notes:ChatGPT

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All RF Boneyard character names and artwork are original brand characters of Hijuelos Sound Works LLC.

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Generated image: Power pair in the RF lab

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SD2931-11 power pair just crawled out of the RF Boneyard.

Bench-tested pair. Donor pull stock. Hard-to-find RF repair parts for rigs that refuse to stay dead.

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get readu for beanch test 2931-10

Ready, Joe. For the SD2931-10 bench test, send me the readings in this order and I’ll turn it into the full RF Boneyard product metrics/listing package:

SD2931-10 Bench Test Sheet

Vgs / threshold:

Ip / drain current at test point:

Gate leakage:

Vgs off:

Ip at off test:

gm / transconductance:

Ip range during gm test:

Rds(on):

Ip during Rds test:

Vgs during Rds test:

Body diode Vf:

Qty: single or pair

SKU:

For Instagram/product wording, we’ll call it something like:

SD2931-10 RF Power MOSFET — Bench-Tested Donor Pull
Hard-to-find RF power transistor for HF / VHF amplifier repair, PA board restoration, and technician bench stock.

Send the numbers when ready.

showing as mosfet

Good — that’s what we want to see.

For the SD2931-10, the tester showing MOSFET is normal because this part is an RF power MOSFET / LDMOS-style RF transistor, not a regular bipolar transistor.

For RF Boneyard wording, use:

Device Type: RF Power MOSFET
Package: Flange-mount RF transistor package
Use Case: HF/VHF RF power amplifier final / driver service, donor-board repair stock, technician bench stock
Condition wording: Bench-tested donor pull / used RF power device

Now send me the readings one by one:

Vgs:
Id / Ip:
Gate leakage:
Vgs(off):
gm:
Rds(on):
Body diode Vf:

Once you give me both devices, I’ll format the matched-pair metrics and product listing.

vgs 2.345v

Got it — SD2931-10 bench test started.

Device 1 reading so far:

Vgs / Threshold: 2.345 V

Next send:

Ip / drain current at that test point:

ip5.04ma

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA

Next send:

Gate leakage:

ig 1ua

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA

Next send:

Vgs(off):

vgs off 1.503v

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V

Next send:

Ip at Vgs(off):

1p=4.9ua

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA

Next send:

gm / transconductance:

gm=29.3mava

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V

Next send:

Ip range during gm test:

ip3.0ma to 5.5.0ma

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA

I read your “5.5.0ma” as 5.0 mA — correct me later if it was 5.5 mA.

Next send:

Rds(on):

rds 1.0 ohms

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?

Next send:

Ip during Rds(on) test:

ip=5.0ma

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?
Ip during Rds(on) test: 5.0 mA

Next send:

Vgs during Rds(on) test:

vgs = 8.0v

Got it.

SD2931-10 — Device 1 readings so far

Device Type: MOSFET / RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?
Ip during Rds(on) test: 5.0 mA
Vgs during Rds(on) test: 8.0 V

Next send:

Body diode Vf:

body diode 0.59vf

Got it — Device 1 SD2931-10 bench test complete.

SD2931-10 — Device 1 Metrics

Device Type: RF Power MOSFET
Vgs / Threshold: 2.345 V
Ip / Drain Current: 5.04 mA
Gate Leakage / Ig: 1 µA
Vgs(off): 1.503 V
Ip at Vgs(off): 4.9 µA
gm / Transconductance: 29.3 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?
Ip during Rds(on) test: 5.0 mA
Vgs during Rds(on) test: 8.0 V
Body Diode Vf: 0.59 V

Looks clean for catalog notes: low gate leakage, normal MOSFET identification, body diode present, and stable low-current bench readings.

Ready for Device 2 when you are. Start with:

Vgs:

test like mosfet

Yes — record it as:

Tester Identification: MOSFET
Device Type for Listing: RF Power MOSFET
Part: SD2931-10

That is the right wording for the bench sheet. The SD2931-10 is an RF power MOSFET-type device, so the tester reading it as MOSFET is good.

For the listing notes:

Bench Test Note:
Device identified as MOSFET on component tester. Low-current bench readings recorded for Vgs, gate leakage, Vgs(off), gm, Rds(on), and body diode. Buyer should perform final RF validation under proper bias, load, heatsink, and service-manual conditions before installation.

Ready for Device 2 — send Vgs first.

vgs on =2.348v

Got it — SD2931-10 Device 2 started.

Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V

Very close to Device 1’s 2.345 V, which is a good sign for a pair.

Next send:

Ip / Drain Current:

ip 5.00ma

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA

Nice match so far against Device 1:

Device 1: 2.345 V / 5.04 mA
Device 2: 2.348 V / 5.00 mA

Next send:

Gate leakage / Ig:

ig=2ua

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA

Still looking good. The pair is close so far:

Device 1: Vgs 2.345 V / Ip 5.04 mA / Ig 1 µA
Device 2: Vgs 2.348 V / Ip 5.00 mA / Ig 2 µA

Next send:

Vgs(off):

bgs off =1.518v

Got it — reading that as Vgs(off) = 1.518 V.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V

Still matching close to Device 1:

Device 1 Vgs(off): 1.503 V
Device 2 Vgs(off): 1.518 V

Next send:

Ip at Vgs(off):

ip=5.1ua

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA

Still a tight pair compared to Device 1:

Device 1: 1.503 V / 4.9 µA
Device 2: 1.518 V / 5.1 µA

Next send:

gm / transconductance:

gm=30.9ma

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA
gm / Transconductance: 30.9 mA/V

Very close to Device 1:

Device 1 gm: 29.3 mA/V
Device 2 gm: 30.9 mA/V

Next send:

Ip range during gm test:

ip 3.0ma to 5.0ma

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA
gm / Transconductance: 30.9 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA

This pair is looking very close.

Next send:

Rds(on):

rds on 1.0 ohms

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA
gm / Transconductance: 30.9 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?

Still matching Device 1 nicely:

Device 1 Rds(on): 1.0 ?
Device 2 Rds(on): 1.0 ?

Next send:

Ip during Rds(on) test:

ip=5.0ma

Got it.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA
gm / Transconductance: 30.9 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?
Ip during Rds(on) test: 5.0 mA

Next send:

Vgs during Rds(on) test:

bgs=8.0v

Got it — reading that as Vgs during Rds(on) test = 8.0 V.

SD2931-10 — Device 2 readings so far

Tester Identification: MOSFET
Vgs(on) / Threshold: 2.348 V
Ip / Drain Current: 5.00 mA
Gate Leakage / Ig: 2 µA
Vgs(off): 1.518 V
Ip at Vgs(off): 5.1 µA
gm / Transconductance: 30.9 mA/V
Ip range during gm test: 3.0 mA to 5.0 mA
Rds(on): 1.0 ?
Ip during Rds(on) test: 5.0 mA
Vgs during Rds(on) test: 8.0 V

Next send:

Body diode Vf:

body =diode 0.58vf

Perfect — SD2931-10 pair bench test complete.
SD2931-10 RF Power MOSFET Pair — Bench Metrics

Tester Identification: MOSFET
Device Type: RF Power MOSFET
Package: Flange-mount RF transistor package
Condition: Bench-tested donor pull pair
Metric Device 1 Device 2
Vgs(on) / Threshold 2.345 V 2.348 V
Ip / Drain Current 5.04 mA 5.00 mA
Gate Leakage / Ig 1 µA 2 µA
Vgs(off) 1.503 V 1.518 V
Ip at Vgs(off) 4.9 µA 5.1 µA
gm / Transconductance 29.3 mA/V 30.9 mA/V
Ip range during gm test 3.0–5.0 mA 3.0–5.0 mA
Rds(on) 1.0 ? 1.0 ?
Ip during Rds(on) test 5.0 mA 5.0 mA
Vgs during Rds(on) test 8.0 V 8.0 V
Body Diode Vf 0.59 V 0.58 V
Catalog note

This is a very close bench-matched pair based on low-current component tester readings. The Vgs numbers are almost dead-on, leakage is low, Rds(on) matches, and body diode readings are nearly identical.
RF Boneyard listing wording

Bench-Tested Pair Notes:
Both SD2931-10 devices identified as MOSFETs on component tester. Low-current bench readings recorded for Vgs(on), gate leakage, Vgs(off), transconductance, Rds(on), and body diode Vf. Pair shows close matching across key low-current test points. Sold as donor-pull RF repair stock. Buyer should perform final RF validation under proper bias, heatsink, load, and service-manual conditions before installation.